RF / Microwave Switches

Pin diode and mmic switch designs supporting multi-octave frequency requirements. Hybrid and SMT designs are available based on size constraints and operating environment.

Pin Diode Switches provide the highest level of signal isolation, higher operating power levels, and lower insertion loss but require internal diode driver designs that require higher supply current. Switching speeds of < 40 nanoseconds can be achieved. Multi-octave frequency band coverage is more difficult to obtain.

GaAs MMIC Switches provide switching times as low as 10 nanoseconds with very low power consumption. Signal isolation is typically less than pin diode designs, while isolation is usually lower than pin diode designs. The GaAs devices internal to these switches limit the maximum input signal levels to less than 1 watt. These switches have the inherent advantage of supporting multi-octave frequency bands with extremely low power consumption.